03 / Proof of Work
Global PCT Patent
STATUS: FILED & SECURED
UHV Architecture
STATUS: CAD SCHEMATICS COMPLETE
Transport Solver
STATUS: GAIN SATURATION VERIFIED
FIG 3.1: TARGET CHAMBER ORTHOGRAPHIC
Replatforming extreme ultraviolet lithography from first principles. We are building tabletop muonic X-ray sources
to break the 13.5nm EUV monopoly.
The semiconductor industry cannot push past the 13.5nm limit without using stadium-sized synchrotrons. It is an optical brute-force nightmare costing upwards of $500M per machine.
Next-gen AI chips need a new kind of laser.
By utilizing the hyperfine splitting of muonic energy levels in Bismuth-209, we shift the transition energy into the tender X-ray regime. A 750 TW laser driving a relativistic VACNT pinch yields a single-pass gain-length of gL ≈ 18.69.
The result: A coherent 0.124nm X-ray beam from a tabletop machine.
STATUS: FILED & SECURED
STATUS: CAD SCHEMATICS COMPLETE
STATUS: GAIN SATURATION VERIFIED
Raising a $250K Pre-Seed to manufacture the targets and execute the validation run at the 750 TW ALLS beamline in Canada.
Upon empirical TRL-3 validation, this asset bypasses the standard Seed phase, unlocking a Series A trajectory to build the commercial alpha unit.
NDA REQUIRED FOR FULL SCHEMATICS.